Journal article

Quantification of impurity concentration in Cu2O and CuO via secondary ion mass spectrometry


Authors listLaufer, A; Reppin, D; Metelmann, H; Geburt, S; Ronning, C; Leichtweiss, T; Janek, J; Meyer, BK

Publication year2012

Pages801-811

Journalphysica status solidi (b) – basic solid state physics

Volume number249

Issue number4

ISSN0370-1972

eISSN1521-3951

DOI Linkhttps://doi.org/10.1002/pssb.201147407

PublisherWiley


Abstract
Secondary ion mass spectrometry (SIMS) is a technically matured analysis technique for the investigation of depth and lateral distributions in solids. The raw data of a SIMS measurement provides only qualitative information. For quantification so-called relative sensitivity factors (RSF) are mandatory. To our knowledge no RSFs have been determined for Cu2O and CuO so far. In this work the RSFs for 21 elements in Cu2O and 14 elements in CuO have been determined via ion implanted standards. For the RSF determination we present the plateau method (Section 3) for box-like implantation profiles. This method provides a lower uncertainty in RSF value compared to the obtained uncertainty using single implantation profiles. In addition, we have estimated the electron affinities of NO2, AsO2 and SbO to 0.55, 2.7 and 2.85?eV, respectively. Unexpectedly, we observe for Cu2O and CuO nearly identical RSF values. This behaviour cannot be attributed to a change in chemical composition caused by the SIMS sputter process. Furthermore, the calculated RSFs have been used to determine the impurity concentrations of our sputtered copper oxide thin films.



Citation Styles

Harvard Citation styleLaufer, A., Reppin, D., Metelmann, H., Geburt, S., Ronning, C., Leichtweiss, T., et al. (2012) Quantification of impurity concentration in Cu2O and CuO via secondary ion mass spectrometry, physica status solidi (b) – basic solid state physics, 249(4), pp. 801-811. https://doi.org/10.1002/pssb.201147407

APA Citation styleLaufer, A., Reppin, D., Metelmann, H., Geburt, S., Ronning, C., Leichtweiss, T., Janek, J., & Meyer, B. (2012). Quantification of impurity concentration in Cu2O and CuO via secondary ion mass spectrometry. physica status solidi (b) – basic solid state physics. 249(4), 801-811. https://doi.org/10.1002/pssb.201147407


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