Journalartikel

Jahr der Veröffentlichung: 2007

Seiten: 10988-10992

Zeitschrift: Journal of Physical Chemistry C

Bandnummer: 111

Heftnummer: 29

DOI Link: https://doi.org/10.1021/jp071339b

Verlag: American Chemical Society

Abstract: 

Ultrathin ruthenium films are promising capping layers protecting extreme ultraviolet lithography optics against carbon growth and oxidation. The structure and reactivity of 2, 5, and 7 nm thick nanocrystalline Ru films on Si (serving as a model system for Ru capping layers) were studied by multiple techniques including scanning electron microscopy, X-ray diffraction, X-ray reflectivity, and X-ray photoelectron spectroscopy. The structural analysis indicated dense and flat Ru films, consisting of preferentially (0001)-oriented grains. High resolution core-level Ru 3d5/2 and O 1s spectroscopy studies have revealed that these Ru films exposed to O2 ambient are resistant to oxidation up to ∼470 K similar to the oxidation of single-crystalline Ru(0001) surfaces. The reduction of the oxide in the H2 ambient is highly effective and proceeds already below 370 K.

Harvard-Zitierstil: He, Y., Goriachko, A., Korte, C., Farkas, A., Mellau, G., Dudin, P., et al. (2007) Oxidation and Reduction of Ultrathin Nanocrystalline Ru Films on Silicon:  Model System for Ru-Capped Extreme Ultraviolet Lithography Optics, Journal of Physical Chemistry C, 111(29), pp. 10988-10992. https://doi.org/10.1021/jp071339b

APA-Zitierstil: He, Y., Goriachko, A., Korte, C., Farkas, A., Mellau, G., Dudin, P., Greoratti, L., barinov, A., Kiskinova, M., Stierle, A., Kasper, N., Bajt, S., & Over, H. (2007). Oxidation and Reduction of Ultrathin Nanocrystalline Ru Films on Silicon:  Model System for Ru-Capped Extreme Ultraviolet Lithography Optics. Journal of Physical Chemistry C. 111(29), 10988-10992. https://doi.org/10.1021/jp071339b