Journalartikel

Jahr der Veröffentlichung: 2005

Seiten: 873-876

Zeitschrift: Journal of the Chinese Chemical Society

Bandnummer: 52

Heftnummer: 5

ISSN: 0009-4536

DOI Link: https://doi.org/10.1002/jccs.200500122

Verlag: Wiley-VCH Verlag

Abstract: 
The study is aimed to prevent the formation of the aluminium carbide compound Al4C3 that negatively affects Al-Si-C based materials. The reaction products of elementary aluminium, silicon and graphite as well as aluminium with either beta-SiC or alpha-SiC without and with graphite at temperatures 1200 degrees-2500 degrees C under different atmospheres and reaction times were characterized using powder X-ray diffraction and scanning electron microscopy (SEM) with an energy dispersive X-ray (EDX) analysis. The results of the powder diffraction study show that under the conditions (1450 degrees C; 8 h; vacuum) the formation of Al4C3 could be prevented. The reaction products at those conditions consist of the ternary compound Al4SiC4 besides SiC and residual carbon. The ternary aluminium silicon carbide Al4SiC4 crystallizes in a hexagonal crystal system with unit cell dimensions a = 327.64(4) pm, b = 2171.2(6) pm and space group P6(3)mc (no. 186). The crystal Structure of Al4SiC4 is isostructural with Al5C3N and consists of layers of Al4C3 and SiC.

Harvard-Zitierstil: Walter, D. and Karyasa, I. (2005) Solid state reactions in the Al-Si-C system, Journal of the Chinese Chemical Society, 52(5), pp. 873-876. https://doi.org/10.1002/jccs.200500122

APA-Zitierstil: Walter, D., & Karyasa, I. (2005). Solid state reactions in the Al-Si-C system. Journal of the Chinese Chemical Society. 52(5), 873-876. https://doi.org/10.1002/jccs.200500122