Journalartikel

Jahr der Veröffentlichung: 1998

Seiten: 782-785

Zeitschrift: Surface Science

Bandnummer: 402-404

DOI Link: https://doi.org/10.1016/S0039-6028(97)01060-1

Verlag: Elsevier

Abstract: 

Using a recently developed MBE apparatus, the GaAs (-1-1-1)B(2×2) surface was prepared and studied in situ by photoemission and LEED intensity analysis. The measured surface core level shifts of the Ga and As 3d core levels support the atomic geometry of the As-trimer model whose detailed structure was determined by LEED intensity analysis.

Harvard-Zitierstil: Setzer, C., Platen, J., Bludau, H., Gierer, M., Over, H. and Jacobi, K. (1998) LEED intensity and surface core level shift analysis of the MBE-prepared GaAs(-1-1-1)B(2x2) surface, Surface Science, 402-404, pp. 782-785. https://doi.org/10.1016/S0039-6028(97)01060-1

APA-Zitierstil: Setzer, C., Platen, J., Bludau, H., Gierer, M., Over, H., & Jacobi, K. (1998). LEED intensity and surface core level shift analysis of the MBE-prepared GaAs(-1-1-1)B(2x2) surface. Surface Science. 402-404, 782-785. https://doi.org/10.1016/S0039-6028(97)01060-1