Journalartikel

Jahr der Veröffentlichung: 1995

Seiten: 451-457

Zeitschrift: Surface Review and Letters

Bandnummer: 2

Heftnummer: 4

DOI Link: https://doi.org/10.1142/S0218625X95000406

Verlag: World Scientific Publishing

Abstract: 

We have reinvestigated the bond geometry of the surface by means of low-energy electron diffraction using a much larger experimental data set than that previously used. The surface consists of a lattice of Ag atoms which replaces the topmost Si atoms, and forces the remaining Si atoms to form trimers. The Ag-Ag bond length turned out to be 3.47±0.12 Å. The Ag atoms are laterally displaced from the bulk positions of the Si atoms which they have replaced by 0.53 Å resulting in a Ag-Si bond length of 2.36±0.17 Å. The missing top Si layer and the formation of Si trimers lead to strong distortions in deeper Si layers, most notably a buckling in the third and fourth Si layer with a magnitude of about 0.35 Å and 0.2 Å, respectively. Applying the concept of ‘split positions’, the low Debye temperature of Ag has been interpreted as being caused by strong in-plane (either static or dynamic) movements of the Ag atoms perpendicular to the Ag-Si bonding.

Harvard-Zitierstil: Over, H., Tong, S., Quinn, J. and Jona, F. (1995) Refinement of the Si(111)-(√3x√3)R30°-Ag structure by low-energy electron diffraction, Surface Review and Letters, 2(4), pp. 451-457. https://doi.org/10.1142/S0218625X95000406

APA-Zitierstil: Over, H., Tong, S., Quinn, J., & Jona, F. (1995). Refinement of the Si(111)-(√3x√3)R30°-Ag structure by low-energy electron diffraction. Surface Review and Letters. 2(4), 451-457. https://doi.org/10.1142/S0218625X95000406