Journal article

Publication year: 2016

Pages: 212-217

Journal: Nano Letters

Volume number: 16

Issue number: 1

Open access status: Green

DOI Link: https://doi.org/10.1021/acs.nanolett.5b03515

Publisher: American Chemical Society

Abstract: 

We demonstrate a new approach for engineering group IV
semiconductor-based quantum photonic structures containing negatively
charged silicon-vacancy (SiV^–) color centers in diamond as
quantum emitters. Hybrid diamond-SiC structures are realized by
combining the growth of nano- and microdiamonds on silicon carbide (3C
or 4H polytype) substrates, with the subsequent use of these diamond
crystals as a hard mask for pattern transfer. SiV^– color
centers are incorporated in diamond during its synthesis from molecular
diamond seeds (diamondoids), with no need for ion-implantation or
annealing. We show that the same growth technique can be used to grow a
diamond layer controllably doped with SiV^– on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV^– centers. Scanning confocal photoluminescence measurements reveal optically active SiV^–
lines both at room temperature and low temperature (5 K) from all
fabricated structures, and, in particular, very narrow line widths and
small inhomogeneous broadening of SiV^– lines from all-diamond
nanopillar arrays, which is a critical requirement for quantum
computation. At low temperatures (5 K) we observe in these structures
the signature typical of SiV^– centers in bulk diamond,
consistent with a double lambda. These results indicate that high
quality color centers can be incorporated into nanophotonic structures
synthetically with properties equivalent to those in bulk diamond,
thereby opening opportunities for applications in classical and quantum
information processing.

Harvard Citation style: Zhang, J., Ishiwata, H., Babinec, T., Radulaski, M., Müller, K., Lagoudakis, K., et al. (2016) Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers, Nano Letters, 16(1), pp. 212-217. https://doi.org/10.1021/acs.nanolett.5b03515

APA Citation style: Zhang, J., Ishiwata, H., Babinec, T., Radulaski, M., Müller, K., Lagoudakis, K., Dory, C., Dahl, J., Edgington, R., Souliere, V., Ferro, G., Fokin, A., Schreiner, P., Shen, Z., Melosh, N., & Vuckovic, J. (2016). Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers. Nano Letters. 16(1), 212-217. https://doi.org/10.1021/acs.nanolett.5b03515