Journal article
Authors list: Berendts, S; Eufinger, JP; Valov, I; Janek, J; Lerch, M
Publication year: 2016
Pages: 42-46
Journal: Solid State Ionics
Volume number: 296
ISSN: 0167-2738
DOI Link: https://doi.org/10.1016/j.ssi.2016.08.015
Publisher: Elsevier
Abstract:
Low yttria-doped cubic zirconium oxide nitride single crystals with high nitrogen contents show unexpected high oxygen ion conductivity in a temperature range between 100 degrees C and 300 degrees C. The observed values are about two orders of magnitude higher than the conductivities for conventionally used 9.5 YSZ. This can be related to an optimal anion vacancy concentration within the oxide nitride material and the low activation energy of the vacancy-based conductivity process. (C) 2016 Elsevier B.V. All rights reserved.
Citation Styles
Harvard Citation style: Berendts, S., Eufinger, J., Valov, I., Janek, J. and Lerch, M. (2016) Ionic conductivity of low yttria-doped cubic zirconium oxide nitride single crystals, Solid State Ionics, 296, pp. 42-46. https://doi.org/10.1016/j.ssi.2016.08.015
APA Citation style: Berendts, S., Eufinger, J., Valov, I., Janek, J., & Lerch, M. (2016). Ionic conductivity of low yttria-doped cubic zirconium oxide nitride single crystals. Solid State Ionics. 296, 42-46. https://doi.org/10.1016/j.ssi.2016.08.015