Journalartikel

Jahr der Veröffentlichung: 2006

Seiten: 309-312

Zeitschrift: Applied Physics A: Materials Science and Processing

Bandnummer: 84

Heftnummer: 3

ISSN: 0947-8396

eISSN: 1432-0630

DOI Link: https://doi.org/10.1007/s00339-006-3624-y

Verlag: Springer

Abstract: 
FeS polycrystalline films were prepared on float glass by radio-frequency reactive sputtering. X-ray diffraction, scanning electron microscopy, Rutherford backscattering, and secondary ion mass spectroscopy were used to characterize the films. The effects of the deposition parameters, such as sputter power and substrate temperature, on the morphological structure and on the metal-semiconductor phase transition of FeS films were investigated. It has been found that the films show a substrate temperature dependent preferential orientation and phase-transition temperature.

Harvard-Zitierstil: Fu, G., Polity, A., Kriegseis, W., Hasselkamp, D., Meyer, B., Mogwitz, B., et al. (2006) Reactive sputter deposition and metal-semiconductor transition of FeS films, Applied Physics. A: Materials Science and Processing, 84(3), pp. 309-312. https://doi.org/10.1007/s00339-006-3624-y

APA-Zitierstil: Fu, G., Polity, A., Kriegseis, W., Hasselkamp, D., Meyer, B., Mogwitz, B., & Janek, J. (2006). Reactive sputter deposition and metal-semiconductor transition of FeS films. Applied Physics. A: Materials Science and Processing. 84(3), 309-312. https://doi.org/10.1007/s00339-006-3624-y