Journalartikel

Jahr der Veröffentlichung: 2006

Seiten: 262113-

Zeitschrift: Applied Physics Letters

Bandnummer: 89

Heftnummer: 26

ISSN: 0003-6951

eISSN: 1077-3118

Open Access Status: Bronze

DOI Link: https://doi.org/10.1063/1.2424663

Verlag: American Institute of Physics

Abstract: 
FeS polycrystalline thin films were prepared on float glass at 500 degrees C by radio-frequency reactive sputtering. The influence of vacuum annealing on the metal-semiconductor transition of FeS films was investigated. It has been found that with the increase of the annealing temperature from 360 to 600 degrees C, the metal-semiconductor transition temperature of FeS films first decreases and then increases, associated with first a reduction and then an enhancement of hysteresis width. The thermal stress is considered to give rise to the abnormal change of the metal-semiconductor transition of the FeS film during annealing.

Harvard-Zitierstil: Fu, G., Polity, A., Volbers, N., Meyer, B., Mogwitz, B. and Janek, J. (2006) Adjustable metal-semiconductor transition of FeS thin films by thermal annealing, Applied Physics Letters, 89(26), p. 262113. https://doi.org/10.1063/1.2424663

APA-Zitierstil: Fu, G., Polity, A., Volbers, N., Meyer, B., Mogwitz, B., & Janek, J. (2006). Adjustable metal-semiconductor transition of FeS thin films by thermal annealing. Applied Physics Letters. 89(26), 262113. https://doi.org/10.1063/1.2424663