Journalartikel

Optical Stark effect in type-II semiconductor heterostructures


AutorenlisteSchaefer, F.; Trautmann, A.; Ngo, C.; Steiner, J. T.; Fuchs, C.; Volz, K.; Dobener, F.; Stein, M.; Meier, T.; Chatterjee, S.

Jahr der Veröffentlichung2024

ZeitschriftPhysical Review B

Bandnummer109

Heftnummer7

ISSN2469-9950

eISSN2469-9969

DOI Linkhttps://doi.org/10.1103/PhysRevB.109.075301

VerlagAmerican Physical Society


Abstract
Charge-transfer excitons feature a permanent dipole moment introduced by the spatial charge separation of electron and hole wave functions. This directly influences and qualitatively modifies the coherent nonlinear optical response monitored in high-quality (Ga, In)As/Ga(As, Sb) type-II heterostructures through an opticalpump optical-probe experiment. A microscopic analysis based on the semiconductor Bloch equations reveals that the spatial inhomogeneity native to such type-II heterostructures introduces already on the Hartree-Fock a finite coupling between excitons of opposite spins which is pivotal for optical Stark effect experiments. This result in a blueshift of the charge-transfer exciton when pumping below the resonance for both, co-circular and counter circular polarization configurations, contrary to well-known and observed shifts of spatially direct exciton resonances.



Zitierstile

Harvard-ZitierstilSchaefer, F., Trautmann, A., Ngo, C., Steiner, J., Fuchs, C., Volz, K., et al. (2024) Optical Stark effect in type-II semiconductor heterostructures, Physical Review B (condensed matter and materials physics), 109(7), Article 075301. https://doi.org/10.1103/PhysRevB.109.075301

APA-ZitierstilSchaefer, F., Trautmann, A., Ngo, C., Steiner, J., Fuchs, C., Volz, K., Dobener, F., Stein, M., Meier, T., & Chatterjee, S. (2024). Optical Stark effect in type-II semiconductor heterostructures. Physical Review B (condensed matter and materials physics). 109(7), Article 075301. https://doi.org/10.1103/PhysRevB.109.075301



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