Journalartikel

Instability Mechanism in Thermoelectric Mg2(Si,Sn) and the Role of Mg Diffusion at Room Temperature


AutorenlisteDuparchy, Amandine; Deshpande, Radhika; Sankhla, Aryan; Ghosh, Sanyukta; Camut, Julia; Park, Sungjin; Park, Sudong; Ryu, Byungki; Mueller, Eckhard; de Boor, Johannes

Jahr der Veröffentlichung2024

ZeitschriftSmall Science

ISSN2688-4046

Open Access StatusGold

DOI Linkhttps://doi.org/10.1002/smsc.202300298

VerlagWiley


Abstract
Mg-2(Si,Sn) shows great promise as thermoelectric material as it is made from non-toxic, abundant, and cost-effective elements offering high performance. This has been emphasized by several thermoelectric generator prototypes, demonstrating technological maturity. However, material stability is paramount for large-scale applications whereas we reveal here that the thermal stability of n-type Mg-2(Si,Sn) may be limited even at room temperature (RT). Integral thermoelectric properties measurements, locally resolved Seebeck coefficient analysis, scanning electron microscopy/energy-dispersive X-ray spectroscopy, and atomic force microscopy are employed to assess changes of n-type samples stored in ambient atmosphere for years, revealing the evolution of the carrier concentration and transport properties in the material as well as surface degradation. This is caused by the diffusion of loosely bound Mg from the bulk towards the surface and subsequent oxidation, leading to a change of Mg-based intrinsic defect concentrations, thereby degrading the thermoelectric performance. This microscopic mechanism is backed up by first-principles calculations, revealing that Mg diffusivity in Mg-2(Si,Sn) is high at RT and that diffusion occurs mainly via Mg vacancies. The observed much faster degradation of Sn-rich Mg-2(Si,Sn) can be correlated with the higher density of Mg vacancies in Mg2Sn compared to Mg2Si, as predicted from defect formation energies.



Zitierstile

Harvard-ZitierstilDuparchy, A., Deshpande, R., Sankhla, A., Ghosh, S., Camut, J., Park, S., et al. (2024) Instability Mechanism in Thermoelectric Mg2(Si,Sn) and the Role of Mg Diffusion at Room Temperature, Small Science. https://doi.org/10.1002/smsc.202300298

APA-ZitierstilDuparchy, A., Deshpande, R., Sankhla, A., Ghosh, S., Camut, J., Park, S., Park, S., Ryu, B., Mueller, E., & de Boor, J. (2024). Instability Mechanism in Thermoelectric Mg2(Si,Sn) and the Role of Mg Diffusion at Room Temperature. Small Science. https://doi.org/10.1002/smsc.202300298



Schlagwörter


FIGUREfirst-principles calculationsmagnesium diffusionmaterial stabilityMERITMG2SIMG2SI0.4SN0.6Mg-2(Si,Sn)PHASE-STABILITYPOINT-DEFECTSSISOLID-SOLUTIONStransport property analysis


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