Journal article

Publication year: 2023

Pages: 3560-3570

Journal: ACS Applied Electronic Materials

Volume number: 5

Issue number: 7

eISSN: 2637-6113

DOI Link: https://doi.org/10.1021/acsaelm.3c00199

Publisher: American Chemical Society

Abstract: 
Vanadium dioxide (VO2) is considered to bethe mostpromising material for thermochromic smart windows due to its insulator-to-metaltransition causing an abrupt change of transmittance near ambienttemperature. TiO2 buffer layers are expected to have abeneficial impact on the growth and performance of the functionalVO(2) thin film, as they may induce crystallinity at lowergrowth temperatures and act as a barrier layer for ion diffusion fromglass substrates. However, a systematic evaluation of TiO2 buffer layers of different phases and thicknesses to assess potentiallycompeting impacts is still lacking. Here, we grow TiO2 bufferlayers by ion-beam sputter deposition (IBSD) at different substratetemperatures to obtain amorphous TiO2 as well as crystallineTiO(2) in the anatase and rutile phase, respectively. Weinvestigate the buffer layers themselves and shed light on how thesebuffer layers influence the performance of the functional VO2 layer grown on top by combining experimental and theoretical means.We find that the VO2||TiO2 interface is themost crucial part of the multilayer structure with an urgent needfor minimum roughness. The two types of crystalline TiO2 buffers yield similar results in terms of optical performance; however,we find that only rutile buffer layers significantly relieve the growthconditions needed.

Harvard Citation style: Becker, M., Kuhl, F., Hauptmann, J., Kessler, J., Benz, S., Chatterjee, S., et al. (2023) Employing Ion-Beam Sputter Deposited TiO₂ Buffer Layers for VO₂-Related Devices, ACS applied electronic materials, 5(7), pp. 3560-3570. https://doi.org/10.1021/acsaelm.3c00199

APA Citation style: Becker, M., Kuhl, F., Hauptmann, J., Kessler, J., Benz, S., Chatterjee, S., Polity, A., & Klar, P. (2023). Employing Ion-Beam Sputter Deposited TiO₂ Buffer Layers for VO₂-Related Devices. ACS applied electronic materials. 5(7), 3560-3570. https://doi.org/10.1021/acsaelm.3c00199