Journalartikel

Test-beam characterisation of the CLICTD technology demonstrator- A small collection electrode high-resistivity CMOS pixel sensor with simultaneous time and energy measurement


AutorenlisteBallabriga, R.; Buschmann, E.; Campbell, M.; Dannheim, D.; Dort, K.; Egidos, N.; Huth, L.; Kremastiotis, I.; Kroger, J.; Linssen, L.; Llopart, X.; Munker, M.; Nurnberg, A.; Snoeys, W.; Spannagel, S.; Vanat, T.; Vicente, M.; Williams, M.

Jahr der Veröffentlichung2021

ZeitschriftNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Bandnummer1006

ISSN0168-9002

eISSN1872-9576

Open Access StatusHybrid

DOI Linkhttps://doi.org/10.1016/j.nima.2021.165396

VerlagElsevier


Abstract
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essential for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the tracking detector studies for the Compact Linear Collider (CLIC). Its design characteristics are of broad interest beyond CLIC, for HL-LHC tracking detector upgrades. It is produced in two different pixel flavours: one with a continuous deep n-type implant, and one with a segmented n-type implant to ensure fast charge collection. The pixel matrix consists of 16 x 128 detection channels measuring 300 mu m x 30 mu m. Each detection channel is segmented into eight sub-pixels to reduce the amount of digital circuity while maintaining a small collection electrode pitch. This paper presents the characterisation results of the CLICTD sensor in a particle beam. The different pixel flavours are compared in detail by using the simultaneous time-over-threshold and time-of-arrival measurement functionalities. Most notably, a spatial resolution down to (4.6 +/- 0.2) mu m is measured. A time resolution down to (5.8 +/- 0.1) ns is observed, after applying an offline time-walk correction using the pixel-charge information. The hit detection efficiency is found to be well above 99.7 % for thresholds of the order of several hundred electrons.



Zitierstile

Harvard-ZitierstilBallabriga, R., Buschmann, E., Campbell, M., Dannheim, D., Dort, K., Egidos, N., et al. (2021) Test-beam characterisation of the CLICTD technology demonstrator- A small collection electrode high-resistivity CMOS pixel sensor with simultaneous time and energy measurement, Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1006, Article 165396. https://doi.org/10.1016/j.nima.2021.165396

APA-ZitierstilBallabriga, R., Buschmann, E., Campbell, M., Dannheim, D., Dort, K., Egidos, N., Huth, L., Kremastiotis, I., Kroger, J., Linssen, L., Llopart, X., Munker, M., Nurnberg, A., Snoeys, W., Spannagel, S., Vanat, T., Vicente, M., & Williams, M. (2021). Test-beam characterisation of the CLICTD technology demonstrator- A small collection electrode high-resistivity CMOS pixel sensor with simultaneous time and energy measurement. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1006, Article 165396. https://doi.org/10.1016/j.nima.2021.165396



Schlagwörter


diodeHigh-resistivity CMOSMonolithic pixel sensors with a small collectionPixel sensorsSilicon detectors

Zuletzt aktualisiert 2025-10-06 um 11:26