Journal article

Test-beam characterisation of the CLICTD technology demonstrator- A small collection electrode high-resistivity CMOS pixel sensor with simultaneous time and energy measurement


Authors listBallabriga, R.; Buschmann, E.; Campbell, M.; Dannheim, D.; Dort, K.; Egidos, N.; Huth, L.; Kremastiotis, I.; Kroger, J.; Linssen, L.; Llopart, X.; Munker, M.; Nurnberg, A.; Snoeys, W.; Spannagel, S.; Vanat, T.; Vicente, M.; Williams, M.

Publication year2021

JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volume number1006

ISSN0168-9002

eISSN1872-9576

Open access statusHybrid

DOI Linkhttps://doi.org/10.1016/j.nima.2021.165396

PublisherElsevier


Abstract
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essential for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the tracking detector studies for the Compact Linear Collider (CLIC). Its design characteristics are of broad interest beyond CLIC, for HL-LHC tracking detector upgrades. It is produced in two different pixel flavours: one with a continuous deep n-type implant, and one with a segmented n-type implant to ensure fast charge collection. The pixel matrix consists of 16 x 128 detection channels measuring 300 mu m x 30 mu m. Each detection channel is segmented into eight sub-pixels to reduce the amount of digital circuity while maintaining a small collection electrode pitch. This paper presents the characterisation results of the CLICTD sensor in a particle beam. The different pixel flavours are compared in detail by using the simultaneous time-over-threshold and time-of-arrival measurement functionalities. Most notably, a spatial resolution down to (4.6 +/- 0.2) mu m is measured. A time resolution down to (5.8 +/- 0.1) ns is observed, after applying an offline time-walk correction using the pixel-charge information. The hit detection efficiency is found to be well above 99.7 % for thresholds of the order of several hundred electrons.



Citation Styles

Harvard Citation styleBallabriga, R., Buschmann, E., Campbell, M., Dannheim, D., Dort, K., Egidos, N., et al. (2021) Test-beam characterisation of the CLICTD technology demonstrator- A small collection electrode high-resistivity CMOS pixel sensor with simultaneous time and energy measurement, Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1006, Article 165396. https://doi.org/10.1016/j.nima.2021.165396

APA Citation styleBallabriga, R., Buschmann, E., Campbell, M., Dannheim, D., Dort, K., Egidos, N., Huth, L., Kremastiotis, I., Kroger, J., Linssen, L., Llopart, X., Munker, M., Nurnberg, A., Snoeys, W., Spannagel, S., Vanat, T., Vicente, M., & Williams, M. (2021). Test-beam characterisation of the CLICTD technology demonstrator- A small collection electrode high-resistivity CMOS pixel sensor with simultaneous time and energy measurement. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1006, Article 165396. https://doi.org/10.1016/j.nima.2021.165396



Keywords


diodeHigh-resistivity CMOSMonolithic pixel sensors with a small collectionPixel sensorsSilicon detectors

Last updated on 2025-10-06 at 11:26