Journal article

Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China


Authors listFan, Y. Y.; Alderweireldt, S.; Agapopoulou, C.; Atanov, N.; Ayoub, M. Kassem; Caforio, D.; Chen, H.; Christie, S.; da Costa, J. G.; Cui, H.; d'Amen, G.; Davydov, Y.; Kiuchi, R.; Ferreira, A. S. C.; Galloway, Z.; Garau, M.; Garcia, L. C.; Ge, J.; Gee, C.; Giacomini, G.; Gkoukousis, V.; Grieco, C.; Guindon, S.; Han, D.; Han, S.; Huang, Y.; Jin, Y.; Jing, M.; Kuwertz, E.; Labitan, C.; Leite, M.; Li, B.; Liang, H.; Liang, Z.; Liu, B.; Liu, J.; Lockerby, M.; Lyu, F.; Makovec, N.; Mazza, S. M.; Martinez-Mckinney, F.; Nikolic, I.; Padilla, R.; Qi, B.; Ran, K.; Ren, H.; Rizzi, C.; Rossi, E.; Sacerdoti, S.; Sadrozinski, H. F. -W.; Saito, G. T.; Schumm, B.; Seiden, A.; Shan, L.; Shi, L.; Tan, Y.; Tricoli, A.; Trincaz-Duvoid, S.; Wilder, M.; Wu, K.; Wyatt, W.; Shi, X.; Yang, T.; Yang, Y.; Yu, C.; Zhang, X.; Zhao, L.; Zhao, M.; Zhao, Y.; Zhao, Z.; Zheng, X.; Zhuang, X.

Publication year2020

JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volume number984

ISSN0168-9002

eISSN1872-9576

Open access statusGreen

DOI Linkhttps://doi.org/10.1016/j.nima.2020.164608

PublisherElsevier


Abstract
This paper studies the radiation hardness of low gain avalanche detector (LGAD) developed by the Novel Device Laboratory (NDL) in Beijing and the Institute of High Energy Physics (IHEP) of Chinese Academy of Sciences, in the context of an upgrade project of the ATLAS detector for the high luminosity phase of LHC. NDL LGAD sensors with different layouts, epitaxial resistivity and doping profile were irradiated up to 1.02 x 10(15 )n(eq)/cm(2) by 70 MeV protons at Cyclotron and Radioisotope Center (CYRIC). The timing resolution of NDL LGAD sensors reached 50 ps and the collected charge reached 3 - 4 fC after irradiation.



Citation Styles

Harvard Citation styleFan, Y., Alderweireldt, S., Agapopoulou, C., Atanov, N., Ayoub, M., Caforio, D., et al. (2020) Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China, Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 984, Article 164608. https://doi.org/10.1016/j.nima.2020.164608

APA Citation styleFan, Y., Alderweireldt, S., Agapopoulou, C., Atanov, N., Ayoub, M., Caforio, D., Chen, H., Christie, S., da Costa, J., Cui, H., d'Amen, G., Davydov, Y., Kiuchi, R., Ferreira, A., Galloway, Z., Garau, M., Garcia, L., Ge, J., Gee, C., ...Zhuang, X. (2020). Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 984, Article 164608. https://doi.org/10.1016/j.nima.2020.164608



Keywords


Beta testHGTDHPK UFSDLGADNEUTRON-IRRADIATIONProton irradiationTiming resolution

Last updated on 2025-10-06 at 11:17