Journalartikel

Jahr der Veröffentlichung: 2020

Zeitschrift: Applied Physics Letters

Bandnummer: 117

Heftnummer: 8

ISSN: 0003-6951

eISSN: 1077-3118

DOI Link: https://doi.org/10.1063/5.0021092

Verlag: American Institute of Physics

Abstract: 
The ultrafast charge-carrier dynamics at the buried heterointerface of gallium phosphide on silicon(001) are investigated by means of time-resolved optical second-harmonic generation. Photon energy dependent measurements reveal the existence of electronic interface states in the bandgap of both materials. Charge carriers excited via these interface states are efficiently injected within a few hundred femtoseconds from the GaP/Si interface into the Si substrate, resulting in the build-up of an electric field perpendicular to the interface on a picosecond time scale.

Harvard-Zitierstil: Mette, G., Zimmermann, J., Lerch, A., Brixius, K., Guedde, J., Beyer, A., et al. (2020) Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface, Applied Physics Letters, 117(8), Article 081602. https://doi.org/10.1063/5.0021092

APA-Zitierstil: Mette, G., Zimmermann, J., Lerch, A., Brixius, K., Guedde, J., Beyer, A., Duerr, M., Volz, K., Stolz, W., & Hoefer, U. (2020). Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface. Applied Physics Letters. 117(8), Article 081602. https://doi.org/10.1063/5.0021092