Journal article

Publication year: 2020

Journal: Journal of Physics D: Applied Physics

Volume number: 53

Issue number: 33

ISSN: 0022-3727

eISSN: 1361-6463

DOI Link: https://doi.org/10.1088/1361-6463/ab88e8

Publisher: IOP Publishing

Abstract: 
Semiconducting nanowires hold great interest as building blocks for nanoscaled electronic and optoelectronic devices, such as field-effect transistors, gas sensors, and light-emitting diodes. Due to their unique structural properties, with a high surface-to-volume ratio and quasi-one-dimensionality, they exhibit interesting new optical and electronic properties. As device performance strongly depends on charge carrier density, carrier lifetime, and carrier mobility, detailed knowledge of the transport properties in quasi-one-dimensional nanostructures is essential. In particular, InAs nanowires are of considerable interest for high-performance transistors, thermoelectrics, spintronics, and quantum computing devices as they not only exhibit high carrier mobility but also a strong spin-orbit coupling and a largeg-factor. Furthermore, at low temperatures a surface accumulation layer can occur in InAs nanowires after surface treatments, resulting in interesting mesoscopic transport phenomena such as universal conductance fluctuations or weak antilocalisation. However, for nanoscaled magnetoelectronic or spintronic applications, nanowires with adjustable ferromagnetic properties are desirable. As the growth of dilute magnetic semiconductors and semiconducting nanowires with a Curie temperature above 300 K is still challenging, MnAs/InAs heterojunction nanowires, where ferromagnetic nanoclusters are embedded in a semiconducting matrix, may represent a promising alternative. Additionally, such heterojunction nanowires have been reported to exhibit huge magnetoresistance effects as well as a relatively long spin-relaxation time.

Harvard Citation style: Uredat, P., Elm, M., Horiguchi, R., Klar, P. and Hara, S. (2020) The transport properties of InAs nanowires: an introduction to MnAs/InAs heterojunction nanowires for spintronics, Journal of Physics D: Applied Physics, 53(33), Article 333002. https://doi.org/10.1088/1361-6463/ab88e8

APA Citation style: Uredat, P., Elm, M., Horiguchi, R., Klar, P., & Hara, S. (2020). The transport properties of InAs nanowires: an introduction to MnAs/InAs heterojunction nanowires for spintronics. Journal of Physics D: Applied Physics. 53(33), Article 333002. https://doi.org/10.1088/1361-6463/ab88e8