Journal article
Authors list: Dannheim, D.; Dort, K.; Hynds, D.; Munker, M.; Nurnberg, A.; Snoeys, W.; Spannagel, S.
Publication year: 2020
Journal: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume number: 964
ISSN: 0168-9002
eISSN: 1872-9576
Open access status: Hybrid
DOI Link: https://doi.org/10.1016/j.nima.2020.163784
Publisher: Elsevier
Combining electrostatic field simulations with Monte Carlo methods enables realistic modeling of the detector response for novel monolithic silicon detectors with strongly non-linear electric fields. Both the precise field description and the inclusion of Landau fluctuations and production of secondary particles in the sensor are crucial ingredients for the understanding and reproduction of detector characteristics. In this paper, a CMOS pixel sensor with small collection electrode design, implemented in a high-resistivity epitaxial layer, is simulated by integrating a detailed electric field model from finite element TCAD into a Monte Carlo based simulation with the Allpix(2) framework. The simulation results are compared to data recorded in test-beam measurements and very good agreement is found for various quantities such as cluster size, spatial resolution and efficiency. Furthermore, the observables are studied as a function of the intra-pixel incidence position to enable a detailed comparison with the detector behavior observed in data. The validation of such simulations is fundamental for modeling the detector response and for predicting the performance of future prototype designs. Moreover, visualization plots extracted from the charge carrier drift model of the framework can aid in understanding the charge propagation behavior in different regions of the sensor.
Abstract:
Citation Styles
Harvard Citation style: Dannheim, D., Dort, K., Hynds, D., Munker, M., Nurnberg, A., Snoeys, W., et al. (2020) Combining TCAD and Monte Carlo methods to simulate CMOS pixel sensors with a small collection electrode using the Allpix2 framework, Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 964, Article 163784. https://doi.org/10.1016/j.nima.2020.163784
APA Citation style: Dannheim, D., Dort, K., Hynds, D., Munker, M., Nurnberg, A., Snoeys, W., & Spannagel, S. (2020). Combining TCAD and Monte Carlo methods to simulate CMOS pixel sensors with a small collection electrode using the Allpix2 framework. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 964, Article 163784. https://doi.org/10.1016/j.nima.2020.163784
Keywords
Drift-diffusion; Geant4; High resistivity CMOS; Silicon detectors; TCAD