Journalartikel

Jahr der Veröffentlichung: 2019

Zeitschrift: Applied Physics Letters

Bandnummer: 115

Heftnummer: 24

ISSN: 0003-6951

eISSN: 1077-3118

Open Access Status: Hybrid

DOI Link: https://doi.org/10.1063/1.5127651

Verlag: American Institute of Physics

Abstract: 
Gallium oxide (beta-Ga2O3) is a wide-bandgap compound semiconductor with a bandgap of similar to 4.9 eV that is currently considered promising for a wide range of applications ranging from transparent conducting electrodes to UV optoelectronic devices and power electronics. However, all of these applications require a reliable and precise control of electrical and optical properties of the material, which can be largely affected by impurities, such as transition metals commonly present during the growth. In this work, we employ electron paramagnetic resonance (EPR) spectroscopy to obtain EPR signatures of the 3d-transition metals Co2+ and Cu2+ in beta-Ga2O3 bulk crystals and powders that were unknown so far. Furthermore, we show that both Co2+ and Cu2+ preferentially reside on the octahedral gallium lattice site.

Harvard-Zitierstil: Stehr, J., Hofmann, D., Schoermann, J., Becker, M., Chen, W. and Buyanova, I. (2019) Electron paramagnetic resonance signatures of Co²⁺ and Cu²⁺ in β-Ga₂O₃, Applied Physics Letters, 115(24), Article 242101. https://doi.org/10.1063/1.5127651

APA-Zitierstil: Stehr, J., Hofmann, D., Schoermann, J., Becker, M., Chen, W., & Buyanova, I. (2019). Electron paramagnetic resonance signatures of Co²⁺ and Cu²⁺ in β-Ga₂O₃. Applied Physics Letters. 115(24), Article 242101. https://doi.org/10.1063/1.5127651