Journalartikel
Selective-area growth and transport properties of MnAs/InAs heterojunction nanowires
Autorenliste: Hara, Shinjiro; Elm, Matthias T.; Klar, Peter J.
Jahr der Veröffentlichung: 2019
Seiten: 3863-3876
Zeitschrift: Journal of Materials Research
Bandnummer: 34
Heftnummer: 23
ISSN: 0884-2914
eISSN: 2044-5326
DOI Link: https://doi.org/10.1557/jmr.2019.333
Verlag: Springer
Abstract:
The authors summarize the results of selective-area growth of vertical MnAs/InAs heterojunction nanowire (NW) arrays and present a preliminary characterization of the transport properties of a single MnAs/InAs heterojunction NW and a single InAs host NW for MnAs inclusions. During the endotaxy of MnAs after the selective-area growth of host InAs nanowires (NWs) on partially SiO2-masked GaAs(111)B substrates, hexagonal NiAs-type MnAs nanoclusters (NCs), which exhibit spontaneous magnetization at room temperature, are formed with the < 0001 > direction oriented parallel to the < 111 > B direction of the zinc-blende-type InAs host NWs. For InAs host NWs, a large positive ordinary magnetoresistance (MR) effect up to 165% is observed at temperatures between 7 and 280 K. In addition, magnetotransport measurements reveal universal conductance fluctuations and a weak Anderson localization at temperatures up to 20 K due to a charge-accumulation layer formed at the surface. Single MnAs/InAs heterojunction NWs, however, exhibit only a negative MR effect, which is independent of temperature T < 10 K and linearly decreases up to -10% at 10 T with increasing magnetic field. These results reveal the tremendous influence of ferromagnetic NCs on the transport behavior inside the InAs host NWs.
Zitierstile
Harvard-Zitierstil: Hara, S., Elm, M. and Klar, P. (2019) Selective-area growth and transport properties of MnAs/InAs heterojunction nanowires, Journal of Materials Research, 34(23), pp. 3863-3876. https://doi.org/10.1557/jmr.2019.333
APA-Zitierstil: Hara, S., Elm, M., & Klar, P. (2019). Selective-area growth and transport properties of MnAs/InAs heterojunction nanowires. Journal of Materials Research. 34(23), 3863-3876. https://doi.org/10.1557/jmr.2019.333
Schlagwörter
FERROMAGNETIC MNAS NANOCLUSTERS; GAAS NANOWIRES; INAS; MAGNETIC-PROPERTIES; magnetoresistance (transport); nanostructure; SEMICONDUCTOR; SILICON NANOWIRE; SOLAR-CELLS; UNIVERSAL CONDUCTANCE FLUCTUATIONS; vapor phase epitaxy (VPE); WEAK-LOCALIZATION
