Journal article

Publication year: 2019

Journal: physica status solidi (a) – applications and materials science

Volume number: 216

Issue number: 20

ISSN: 1862-6300

eISSN: 1862-6319

Open access status: Hybrid

DOI Link: https://doi.org/10.1002/pssa.201900385

Publisher: Wiley

Abstract: 
beta-Ga2O3 thin films are deposited by radiofrequency (RF)-magnetron sputtering on quartz and c-sapphire substrates using a ceramic stoichiometric Ga2O3 target and a constant flux of argon process gas. Oxygen flux, heater power, and sputtering power are varied in the synthesis of the layers. The resulting Ga2O3 layers are analyzed in terms of their structural and optical properties. Based on this analysis, the process parameters leading to the formation of an optimized beta-Ga2O3 layer are identified. The main challenge in obtaining the stoichiometric beta-Ga2O3 thin films by sputter deposition is to overcome the influence of a strong preferential sputtering of Ga from the ceramic target. This can be achieved by adding a suitable fraction of oxygen to the argon process gas used in the deposition process. Furthermore, it is demonstrated that the refractive index dispersion of beta-Ga2O3 depends strongly on its composition. Thus, a combined analysis of refractive index dispersion and optical bandgap position may serve as a valuable preliminary probe of the thin film's composition.

Harvard Citation style: Schurig, P., Couturier, M., Becker, M., Polity, A. and Klar, P. (2019) Optimizing the Stoichiometry of Ga₂O₃ Grown by RF-Magnetron Sputter Deposition by Correlating Optical Properties and Growth Parameters, physica status solidi (a) – applications and materials science, 216(20), Article 1900385. https://doi.org/10.1002/pssa.201900385

APA Citation style: Schurig, P., Couturier, M., Becker, M., Polity, A., & Klar, P. (2019). Optimizing the Stoichiometry of Ga₂O₃ Grown by RF-Magnetron Sputter Deposition by Correlating Optical Properties and Growth Parameters. physica status solidi (a) – applications and materials science. 216(20), Article 1900385. https://doi.org/10.1002/pssa.201900385