Journalartikel

Jahr der Veröffentlichung: 2019

Seiten: 18240-18247

Zeitschrift: Journal of Physical Chemistry C

Bandnummer: 123

Heftnummer: 30

ISSN: 1932-7447

eISSN: 1932-7455

DOI Link: https://doi.org/10.1021/acs.jpcc.9b04635

Verlag: American Chemical Society

Abstract: 
Earth-abundant visible light-absorbing photoelectrodes of the spinel ferrites ZnFe2O4 and MgFe2O4 have been prepared as dense and crack free thin films using pulsed laser deposition, to investigate the basic electronic properties of these two emerging absorber materials. X-ray diffraction and Raman spectroscopy confirm the phase purity of the prepared thin films, whereas magnetotransport and Hall measurements in combination with Mott-Schottky and photoelectrochemical measurements were performed to reveal the performance-limiting factors of those absorbers for photoelectrochemical water oxidation. Our results provide new insights to improve the performance of ferrite-based photoelectrodes in the future.

Harvard-Zitierstil: Henning, R., Uredat, P., Simon, C., Bloesser, A., Cop, P., Elm, M., et al. (2019) Characterization of MFe₂O₄ (M = Mg, Zn) Thin Films Prepared by Pulsed Laser Deposition for Photoelectrochennical Applications, Journal of Physical Chemistry C, 123(30), pp. 18240-18247. https://doi.org/10.1021/acs.jpcc.9b04635

APA-Zitierstil: Henning, R., Uredat, P., Simon, C., Bloesser, A., Cop, P., Elm, M., & Marschall, R. (2019). Characterization of MFe₂O₄ (M = Mg, Zn) Thin Films Prepared by Pulsed Laser Deposition for Photoelectrochennical Applications. Journal of Physical Chemistry C. 123(30), 18240-18247. https://doi.org/10.1021/acs.jpcc.9b04635