Journalartikel
Autorenliste: Guerra, Juan M.; Mahr, Carsten; Giar, Marcel; Czerner, Michael; Heiliger, Christian
Jahr der Veröffentlichung: 2018
Zeitschrift: Physical Review Materials
Bandnummer: 2
Heftnummer: 10
ISSN: 2475-9953
DOI Link: https://doi.org/10.1103/PhysRevMaterials.2.104605
Verlag: American Physical Society
Abstract:
Mg2X1-xYx thermoelectric materials and their pseudobinary related alloys, for X, Y = Si,Ge,Sn, have been the subject of intense research activity. Studies have revealed their electronic nature, but important properties are still unclear or missing in the case of intermediate solid solutions. Within the CPA-KKR formalism, in the full-relativistic description, we observe stronger deviations from Vegard's law as the lattice constant difference increases. We compute the Bloch spectral density function to map a local-parabolic band structure in the alloys, whenever the disorder-induced broadening is small. We trace nonlinear trends for the indirect and direct band gaps, spin-orbit coupling and the crossing between the low-lying conduction bands observed in the Mg2X1-3Snx systems. Our computations show that the broadening of the heavy- and light-hole bands is the smallest, but, in either case, we discuss the trends and anisotropy effects of band- and direction-dependent effective masses.
Zitierstile
Harvard-Zitierstil: Guerra, J., Mahr, C., Giar, M., Czerner, M. and Heiliger, C. (2018) Ab initio calculations of electronic band structure and effective-mass parameters of thermoelectric Mg2X1-xYx(X, Y = Si, Ge, or Sn) pseudobinary alloys, PHYSICAL REVIEW MATERIALS, 2(10), Article 104605. https://doi.org/10.1103/PhysRevMaterials.2.104605
APA-Zitierstil: Guerra, J., Mahr, C., Giar, M., Czerner, M., & Heiliger, C. (2018). Ab initio calculations of electronic band structure and effective-mass parameters of thermoelectric Mg2X1-xYx(X, Y = Si, Ge, or Sn) pseudobinary alloys. PHYSICAL REVIEW MATERIALS. 2(10), Article 104605. https://doi.org/10.1103/PhysRevMaterials.2.104605
Schlagwörter
INFRARED-ABSORPTION; INTERMETALLIC COMPOUNDS; MG-2(GE,SN); MG2SI MG2GE; SEMICONDUCTING PROPERTIES; SOLID-SOLUTIONS