Journalartikel

Bottleneck of Diffusion and Inductive Effects in Li10Ge1-xSnxP2S12


AutorenlisteKrauskopf, Thorben; Culver, Sean P.; Zeier, Wolfgang G.

Jahr der Veröffentlichung2018

Seiten1791-1798

ZeitschriftChemistry of Materials

Bandnummer30

Heftnummer5

ISSN0897-4756

eISSN1520-5002

DOI Linkhttps://doi.org/10.1021/acs.chemmater.8b00266

VerlagAmerican Chemical Society


Abstract
The lithium-ion conductor Li10GeP2S12 (LGPS) is known to exhibit ionic conductivity values as high as 12 mS.cm(-1). Unfortunately, counter to chemical intuition, many attempts to enhance the ionic transport in LGPS, e.g., by increasing the Sn fraction in Li10Ge1-xSnxP2S12, have even led to a reduction in the conductivity. Employing a combination of Rietveld refinements against X-ray diffraction data, speed of sound measurements, and electrochemical impedance spectroscopy, we investigate the structure-property relationships governing this behavior. Herein, it is shown that with increasing Sn4+ fraction in Li10Ge1-xSnxP2S12 a structural bottleneck along the diffusion channels in the z-direction begins to tighten, and with the concomitant increase in the lattice softness, the local ionic bonding interactions between Li+ and S2- become stronger, further increasing the activation barrier. This work provides a likely explanation for the lower conductivity exhibited by Li10SnP2S12 and demonstrates that there is more to the underlying lithium diffusion mechanism in the Li10MP2S12 structure.



Zitierstile

Harvard-ZitierstilKrauskopf, T., Culver, S. and Zeier, W. (2018) Bottleneck of Diffusion and Inductive Effects in Li10Ge1-xSnxP2S12, Chemistry of Materials, 30(5), pp. 1791-1798. https://doi.org/10.1021/acs.chemmater.8b00266

APA-ZitierstilKrauskopf, T., Culver, S., & Zeier, W. (2018). Bottleneck of Diffusion and Inductive Effects in Li10Ge1-xSnxP2S12. Chemistry of Materials. 30(5), 1791-1798. https://doi.org/10.1021/acs.chemmater.8b00266



Schlagwörter


LI2S-P2S5 GLASSESLITHIUM SUPERIONIC CONDUCTORRECENT PROGRESSSOLID-STATE LITHIUM


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