Journal article

Sulfonated Mesoporous Silica as Proton Exchanging Layer in Solid-State Organic Transistor


Authors listYambem, Soniya D.; Timm, Jana; Weiss, Morten; Pandey, Ajay K.; Marschall, Roland

Publication year2017

JournalAdvanced Electronic Materials

Volume number3

Issue number12

ISSN2199-160X

DOI Linkhttps://doi.org/10.1002/aelm.201700316

PublisherWiley


Abstract
Electronic devices that can interface with biological systems are highly desirable for developing smart bionics and prosthetics. However, this is challenging since most electronic devices used in our daily life send signals through flow of electrons while biological signals are carried via the exchange of ions and protons. Here, an all-solid-state, low-voltage proton-sensing electronic device using sulfonated mesoporous silica nanoparticles as gate materials in an organic thin film transistor (OTFT) is presented. The OTFT gated with solution processable SO3H-Si-MCM-41 nanoparticle film maintains transistor output characteristics for operating source-drain voltages 0 > V-ds > -2.0 V. This proton-sensing OTFT shows strong modulation in the drain current, approximate to 12-fold increase, when the top of the SO3H-Si-MCM-41 layer is brought in contact with H2O2, demonstrating that such OTFT operation is highly applicable in advanced biomedical sensing platforms. The effect of gate electrode thickness and quantity of analyte on achievable modulation is also presented. The sensitivity and stability of the proton sensitive OTFTs over five decades of concentration of analyte is discussed.



Citation Styles

Harvard Citation styleYambem, S., Timm, J., Weiss, M., Pandey, A. and Marschall, R. (2017) Sulfonated Mesoporous Silica as Proton Exchanging Layer in Solid-State Organic Transistor, Advanced electronic materials, 3(12), Article 1700316. https://doi.org/10.1002/aelm.201700316

APA Citation styleYambem, S., Timm, J., Weiss, M., Pandey, A., & Marschall, R. (2017). Sulfonated Mesoporous Silica as Proton Exchanging Layer in Solid-State Organic Transistor. Advanced electronic materials. 3(12), Article 1700316. https://doi.org/10.1002/aelm.201700316



Keywords


BACTERIORHODOPSINbiosensingFIELD-EFFECT TRANSISTORSHYGROSCOPIC INSULATORlow voltage transistorsMESOPOROUS SILICA NANOPARTICLESorganic thin film transistorsproton sensingTHIN-FILM TRANSISTORS

Last updated on 2025-02-04 at 01:26