Journalartikel

Jahr der Veröffentlichung: 2017

Zeitschrift: Journal of Applied Physics

Bandnummer: 122

Heftnummer: 17

ISSN: 0021-8979

eISSN: 1089-7550

DOI Link: https://doi.org/10.1063/1.4991601

Verlag: American Institute of Physics

Abstract: 
Epitaxial NiO thin films were grown on single crystal substrates of m-plane (10 (1) over bar0), a-plane ((1) over bar(1) over bar 20), c-plane (0001), and r-plane (1 (1) over bar 02) sapphires by ion beam sputtering of a Ni metal target in a mixed argon and oxygen atmosphere. X-ray measurements indicate that the NiO grows epitaxially on all substrates, with its orientation dependent on the cut of the sapphire substrate. The growth mode is the Stranski-Krastanov mode. (110)-oriented NiO grows on m-plane sapphire, while (111)-oriented NiO films are found on both the a-plane and c-plane sapphire. The orientation of NiO found on r-plane sapphire is found to be surface and temperature dependent but is mainly given by (110)oriented grains. Thus, thin NiO films on c-plane and a-plane substrates are best suited to serve as antiferromagnetic pinning layers in magneto-electronic devices. Published by AIP Publishing.

Harvard-Zitierstil: Becker, M., Polity, A. and Klar, P. (2017) NiO films on sapphire as potential antiferromagnetic pinning layers, Journal of Applied Physics, 122(17), Article 175303. https://doi.org/10.1063/1.4991601

APA-Zitierstil: Becker, M., Polity, A., & Klar, P. (2017). NiO films on sapphire as potential antiferromagnetic pinning layers. Journal of Applied Physics. 122(17), Article 175303. https://doi.org/10.1063/1.4991601