Journal article
Authors list: Falkenbach, Oliver; Loeh, Marc O.; Wiegand, Christoph W.; Schmitz, Andreas; Hartung, David; Koch, Guenter; Klar, Peter J.; Mueller, Eckhard; Schlecht, Sabine
Publication year: 2017
Pages: 5781-5791
Journal: Journal of Electronic Materials
Volume number: 46
Issue number: 10
ISSN: 0361-5235
eISSN: 1543-186X
DOI Link: https://doi.org/10.1007/s11664-017-5607-5
Publisher: Electron Devices Society
Abstract:
We have investigated the influence of substituting bismuth for lead in lead telluride. The material was nanostructured by mechanical alloying and compacted via short-term sintering or hot pressing. Synthesis of samples with substitution up to 6 at.% bismuth was carried out twice to ensure reproducibility. All relevant thermoelectric transport parameters were measured in a wide temperature range from 123 K or 173 K to 773 K. Two different techniques for measuring the electrical conductivity and Seebeck coefficient were used, one at low and the other at high temperature. Higher bismuth content of 4 at.% to 6 at.% was found to result in the best thermoelectric properties, with maximum ZT value of about 0.7 at 723 K for 4.0 at.% bismuth. The structure was examined in detail via x-ray diffraction analysis, Raman spectroscopy, and transmission electron microscopy. A key feature of the microstructure was the inhomogeneous distribution of bismuth in the lead telluride matrix and the occurrence of bismuth-rich regions on the nanoscale, related to remarkably increased carrier concentration and mobility.
Citation Styles
Harvard Citation style: Falkenbach, O., Loeh, M., Wiegand, C., Schmitz, A., Hartung, D., Koch, G., et al. (2017) Structural and Thermoelectric Properties of Nanostructured Nominally Stoichiometric Pb1-x Bi x Te Prepared by Mechanical Alloying, Journal of Electronic Materials, 46(10), pp. 5781-5791. https://doi.org/10.1007/s11664-017-5607-5
APA Citation style: Falkenbach, O., Loeh, M., Wiegand, C., Schmitz, A., Hartung, D., Koch, G., Klar, P., Mueller, E., & Schlecht, S. (2017). Structural and Thermoelectric Properties of Nanostructured Nominally Stoichiometric Pb1-x Bi x Te Prepared by Mechanical Alloying. Journal of Electronic Materials. 46(10), 5781-5791. https://doi.org/10.1007/s11664-017-5607-5
Keywords
BI2TE3; compacting methods; DOPED LEAD-TELLURIDE; MOLECULAR-BEAM EPITAXY; PBTE; temperature treatment; Thermoelectric materials; VAPOR-PRESSURE