Journal article

Publication year: 2016

Journal: Semiconductor Science and Technology

Volume number: 31

Issue number: 7

ISSN: 0268-1242

eISSN: 1361-6641

DOI Link: https://doi.org/10.1088/0268-1242/31/7/07LT01

Publisher: IOP Publishing

Abstract: 
We study the magnetotransport properties of n-type BxGa1-x As-0.11 P-0.89: Te alloy samples with 0 <= x <= 0.038 in magnetic fields up to 4 T between 10 and 280 K, some samples also under hydrostatic pressure up to 15 kbar. As a general trend the resistivity increases with increasing x, as both the carrier concentration and the mobility of electrons decrease. The free carrier concentration and mobility of the reference sample GaAs0.11 P-0.89: Te is almost independent of the applied hydrostatic pressure, in particular, at higher temperatures whereas the B0.018Ga0.982As0.11P0.89: Te sample exhibits a different behavior. Its resistivity decreases due to a substantial increase of its free carrier concentration under pressure. This behavior is explained by the existence of a boron-related density of localized states in the vicinity of the conduction band edge of the alloy. The boron states act as electron traps as well as efficient scattering centers. Applying hydrostatic pressure shifts the energetic positions of conduction band edge at the X-point and of the boron states apart, reducing the impact of boron on the electronic transport properties of the alloy.

Harvard Citation style: Ostheim, L., Klar, P., Liebich, S., Ludewig, P., Volz, K. and Stolz, W. (2016) Interplay of boron localized states and electron transport in B_xGa_1-x As_0.11 P_0.89:Te, Semiconductor Science and Technology, 31(7), Article 07LT01. https://doi.org/10.1088/0268-1242/31/7/07LT01

APA Citation style: Ostheim, L., Klar, P., Liebich, S., Ludewig, P., Volz, K., & Stolz, W. (2016). Interplay of boron localized states and electron transport in B_xGa_1-x As_0.11 P_0.89:Te. Semiconductor Science and Technology. 31(7), Article 07LT01. https://doi.org/10.1088/0268-1242/31/7/07LT01