Konferenzpaper

Formation of the spiral morphology of high melting point crystals pulled from the crucible


AutorenlisteSchwabe, Dietrich

Jahr der Veröffentlichung2016

Seiten1-6

ZeitschriftJournal of Crystal Growth

Bandnummer439

ISSN0022-0248

eISSN1873-5002

DOI Linkhttps://doi.org/10.1016/j.jcrysgro.2015.12.041

KonferenzGerman Conference on Crystal Growth

VerlagElsevier


Abstract
This paper presents a description and a model for the transition from cylindrical to spiral growth during Czochralski crystal pulling of high melting point materials. This transition comprises a number of symmetry breakings of the rotational symmetry of the crystal where the first one is ascribed to flaring growth. Flaring growth occurs when the crystal-melt interface has gained a supercritical concave shape. The concave shape arises in case of high melting point semitransparent oxides mainly when the axial radiative heat transport through the crystal becomes insufficient - e.g. when exceeding a certain grown length - and it arises for silicon crystals when the growth speed was chosen too large. The spiral growth starts with the growth of the crystal axis off the rotational axis. This is followed by two more symmetry breakings deforming the melt meniscus-crystal area. The azimuthal growth of the deformed meniscus, together with its axial growth by pulling, results in the spiral morphology. The transition from cylindrical to spiral growth discussed here is a genuine growth-instability - one which is not induced by external disturbances - and it is limiting the cylindrical growth in a fundamental way. (C) 2016 Elsevier B.V. All rights reserved.



Zitierstile

Harvard-ZitierstilSchwabe, D. (2016) Formation of the spiral morphology of high melting point crystals pulled from the crucible, Journal of Crystal Growth, 439, pp. 1-6. https://doi.org/10.1016/j.jcrysgro.2015.12.041

APA-ZitierstilSchwabe, D. (2016). Formation of the spiral morphology of high melting point crystals pulled from the crucible. Journal of Crystal Growth. 439, 1-6. https://doi.org/10.1016/j.jcrysgro.2015.12.041



Schlagwörter


Crystal morphologyCzochralski methodheat transferOxides and silicon


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