Journal article

Publication year: 2015

Pages: 7822-7828

Journal: Nano Letters

Volume number: 15

Issue number: 12

ISSN: 1530-6984

eISSN: 1530-6992

DOI Link: https://doi.org/10.1021/acs.nanolett.5b02332

Publisher: American Chemical Society

Abstract: 
The transport properties of Ge-doped single GaN nanowires are investigated, which exhibit a weak localization effect as well as universal conductance fluctuations at low temperatures. By analyzing these quantum interference effects, the electron phase coherence length was determined. Its temperature dependence indicates that in the case of highly doped nanowires electron-electron scattering is the dominant dephasing mechanism, while for the slightly doped nanowires dephasing originates from Nyquist-scattering. The change of the dominant scattering mechanism is attributed to a modification of the carrier confinement caused by the Ge-doping. The results demonstrate that can be tuned by the donor concentration making Ge-doped GaN nanowires an ideal model system impurities on quantum-interference effects in mesoscopic and nanoscale systems.

Harvard Citation style: Elm, M., Uredat, P., Binder, J., Ostheim, L., Schaefer, M., Hille, P., et al. (2015) Doping-Induced Universal Conductance Fluctuations in GaN Nanowires, Nano Letters, 15(12), pp. 7822-7828. https://doi.org/10.1021/acs.nanolett.5b02332

APA Citation style: Elm, M., Uredat, P., Binder, J., Ostheim, L., Schaefer, M., Hille, P., Muessener, J., Schoermann, J., Eickhoff, M., & Klar, P. (2015). Doping-Induced Universal Conductance Fluctuations in GaN Nanowires. Nano Letters. 15(12), 7822-7828. https://doi.org/10.1021/acs.nanolett.5b02332