Journalartikel

Jahr der Veröffentlichung: 2015

Zeitschrift: Applied Physics Letters

Bandnummer: 107

Heftnummer: 18

ISSN: 0003-6951

eISSN: 1077-3118

DOI Link: https://doi.org/10.1063/1.4935212

Verlag: American Institute of Physics

Abstract: 
The excitonic transitions of the type-II (GaIn) As/Ga(AsSb) gain medium of a "W"-laser structure are characterized experimentally by modulation spectroscopy and analyzed using microscopic quantum theory. On the basis of the very good agreement between the measured and calculated photoreflectivity, the type-I or type-II character of the observable excitonic transitions is identified. Whereas the energetically lowest three transitions exhibit type-II character, the subsequent energetically higher transitions possess type-I character with much stronger dipole moments. Despite the type-II character, the quantum-well structure exhibits a bright luminescence. (C) 2015 AIP Publishing LLC.

Harvard-Zitierstil: Gies, S., Kruska, C., Berger, C., Hens, P., Fuchs, C., Perez, A., et al. (2015) Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures, Applied Physics Letters, 107(18), Article 182104. https://doi.org/10.1063/1.4935212

APA-Zitierstil: Gies, S., Kruska, C., Berger, C., Hens, P., Fuchs, C., Perez, A., Rosemann, N., Veletas, J., Chatterjee, S., Stolz, W., Koch, S., Hader, J., Moloney, J., & Heimbrodt, W. (2015). Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures. Applied Physics Letters. 107(18), Article 182104. https://doi.org/10.1063/1.4935212