Journalartikel

Jahr der Veröffentlichung: 2015

Seiten: 772-776

Zeitschrift: Materials Science in Semiconductor Processing

Bandnummer: 40

ISSN: 1369-8001

eISSN: 1873-4081

DOI Link: https://doi.org/10.1016/j.mssp.2015.07.057

Verlag: Elsevier

Abstract: 
Fully transparent organic field effect transistors (OFET) in top- and bottom-gate layouts were prepared. Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was structured photo-lithographically as either gate- or source- and drain-contact on top of poly(4-vinylphenol) (PVP). The dielectric material was fitted to the sequence of materials by combining water soluble polyvinyl alcohol (PVA) and PVP. N-type conducting hexadecafluorophthalocyaninato-copper (F16PcCu) was used as organic semiconductor sensitive to interface traps. Critical boundary surfaces for film growth were examined by microscopic methods, which revealed smooth polymer surfaces as a result of our preparation and lithography steps characterizing the presented concept as a viable alternative to existing approaches. (C) 2015 Elsevier Ltd. All rights reserved.

Harvard-Zitierstil: Albrecht, G., Heuser, S., Keil, C. and Schlettwein, D. (2015) Strategy for preparation of transparent organic thin film transistors with PEDOT:PSS electrodes and a polymeric gate dielectric, Materials Science in Semiconductor Processing, 40, pp. 772-776. https://doi.org/10.1016/j.mssp.2015.07.057

APA-Zitierstil: Albrecht, G., Heuser, S., Keil, C., & Schlettwein, D. (2015). Strategy for preparation of transparent organic thin film transistors with PEDOT:PSS electrodes and a polymeric gate dielectric. Materials Science in Semiconductor Processing. 40, 772-776. https://doi.org/10.1016/j.mssp.2015.07.057