Journalartikel
Autorenliste: Chetty, Raju; Dadda, Jayaram; de Boor, Johannes; Mueller, Eckhard; Mallik, Ramesh Chandra
Jahr der Veröffentlichung: 2015
Seiten: 156-162
Zeitschrift: Intermetallics: including complex structural and functional alloys
Bandnummer: 57
ISSN: 0966-9795
eISSN: 1879-0216
DOI Link: https://doi.org/10.1016/j.intermet.2014.10.015
Verlag: Elsevier
Abstract:
Recently, research in copper based quaternary chalcogenide materials has focused on the study of thermoelectric properties due to the complexity in the crystal structure. In the present work, stoichiometric quaternary chalcogenide compounds Cu2+xCd1-x,GeSe4 (x = 0, 0.025, 0.05, 0.075, 0.1, 0.125) were prepared by solid state synthesis. The powder X-ray diffraction patterns of all the samples showed a tetragonal crystal structure with the space group I-42m of the main phase, whereas the samples with x = 0 and x = 0.025 revealed the presence of an orthorhombic phase in addition to the main phase as confirmed by Rietveld analysis. The elemental composition of all the samples characterized by Electron Probe Micro Analyzer showed a slight deviation from the nominal composition. The transport properties were measured in the temperature range of 300 K-723 K. The electrical conductivity of all the samples increased with increasing Cu content due to the enhancement of the hole concentration caused by the substitution of Cd (divalent) by Cu (monovalent). The positive Seebeck coefficient of all the samples in the entire temperature ranges indicates that holes are the majority carriers. The Seebeck coefficient of all the samples decreased with increasing Cu content and showed a reverse trend to the electrical conductivity. The total thermal conductivity of all the samples decreased with increasing temperature which was dominated by the lattice contribution. The maximum figure of merit ZT = 0.42 at 723 K was obtained for the compound Cu2.1Cd0.9GeSe4. (C) 2014 Elsevier Ltd. All rights reserved.
Zitierstile
Harvard-Zitierstil: Chetty, R., Dadda, J., de Boor, J., Mueller, E. and Mallik, R. (2015) The effect of Cu addition on the thermoelectric properties of Cu2CdGeSe4, Intermetallics: including complex structural and functional alloys, 57, pp. 156-162. https://doi.org/10.1016/j.intermet.2014.10.015
APA-Zitierstil: Chetty, R., Dadda, J., de Boor, J., Mueller, E., & Mallik, R. (2015). The effect of Cu addition on the thermoelectric properties of Cu2CdGeSe4. Intermetallics: including complex structural and functional alloys. 57, 156-162. https://doi.org/10.1016/j.intermet.2014.10.015
Schlagwörter
annealing; CU2CDSNSE4; THERMOELECTRIC PROPERTIES