Journal article

Publication year: 2014

Journal: Semiconductor Science and Technology

Volume number: 29

Issue number: 12

ISSN: 0268-1242

eISSN: 1361-6641

DOI Link: https://doi.org/10.1088/0268-1242/29/12/124009

Publisher: IOP Publishing

Abstract: 
Tin telluride doped with silver antimony telluride (Tin-Antimony-Silver-Tellurium, TAST-m) was prepared by two mechanochemical methods: mechanical alloying and-as an alternative synthetic route-co-ball-milling, a recently developed way of combining the procedures of mechanical alloying of single elements with the usual ball-milling of polycrystalline compounds. For the two series of products with varying degrees of doping, three different compacting techniques, cold-pressing/annealing (CPA), hot-pressing (HP) and short-term sintering (STS), were applied, and their influence on the thermoelectric properties was investigated. Although short-term sintering seemed to be the most advantageous method in most cases, the influence of the density of an individual pellet on the thermoelectric transport properties needs to be considered. A structural characterization of the different series of nanopowders obtained by the two milling methods was carried out by x-ray diffraction (XRD) and transmission electron microscopy (TEM) studies. The latter also allowed further insight into the microstructure and revealed a homogeneous distribution of silver and antimony in the tin telluride matrix.

Harvard Citation style: Falkenbach, O., Schmitz, A., Dankwort, T., Koch, G., Kienle, L., Mueller, E., et al. (2014) Influence of mechanochemical syntheses and compacting methods on the thermoelectric properties of nanostructured AgSn_mSbTe_2+m (TAST-m), Semiconductor Science and Technology, 29(12), Article 124009. https://doi.org/10.1088/0268-1242/29/12/124009

APA Citation style: Falkenbach, O., Schmitz, A., Dankwort, T., Koch, G., Kienle, L., Mueller, E., & Schlecht, S. (2014). Influence of mechanochemical syntheses and compacting methods on the thermoelectric properties of nanostructured AgSn_mSbTe_2+m (TAST-m). Semiconductor Science and Technology. 29(12), Article 124009. https://doi.org/10.1088/0268-1242/29/12/124009