Journalartikel

Jahr der Veröffentlichung: 2014

Zeitschrift: Journal of Applied Physics

Bandnummer: 116

Heftnummer: 8

ISSN: 0021-8979

eISSN: 1089-7550

DOI Link: https://doi.org/10.1063/1.4894236

Verlag: American Institute of Physics

Abstract: 
Magnetoresistance in dilute magnetic semiconductors is studied in the hopping transport regime. Measurements performed on Cl-doped Zn(1-x)Mn(x)(S)e with x < 8% are compared with simulation results obtained by a hopping transport model. The energy levels of the Cl donors are affected by the magnetization of Mn atoms in their vicinity via the s-d exchange interaction. Compositional disorder, in particular, the random distribution of magnetic atoms, leads to a magnetic-field induced broadening of the donor energy distribution. As the energy distribution broadens, the electron transport is hindered and a large positive contribution to the magnetoresistance arises. This broadening of the donor energy distribution is largely sufficient to account for the experimentally observed magnetoresistance effects in n-type (Zn,Mn)Se with donor concentrations below the metal-insulator transition. (C) 2014 AIP Publishing LLC.

Harvard-Zitierstil: Jansson, F., Wiemer, M., Nenashev, A., Petznick, S., Klar, P., Hetterich, M., et al. (2014) Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping, Journal of Applied Physics, 116(8), Article 083710. https://doi.org/10.1063/1.4894236

APA-Zitierstil: Jansson, F., Wiemer, M., Nenashev, A., Petznick, S., Klar, P., Hetterich, M., Gebhard, F., & Baranovskii, S. (2014). Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping. Journal of Applied Physics. 116(8), Article 083710. https://doi.org/10.1063/1.4894236