Journalartikel

Jahr der Veröffentlichung: 2014

Seiten: 1250-1254

Zeitschrift: physica status solidi (a) – applications and materials science

Bandnummer: 211

Heftnummer: 6

ISSN: 1862-6300

eISSN: 1862-6319

DOI Link: https://doi.org/10.1002/pssa.201300196

Verlag: Wiley

Abstract: 
The influence of power factor enhancement on the superior thermoelectric (TE) performance of Mg2(Si,Sn) is studied based on a comparison with Mg2Si. Doped compounds with compositions of Mg2(Si0.4Sn0.6) are synthesized and the TE properties measured between room temperature and 773K. Carrier concentration and hall mobilities at room temperature are measured on selected samples. Enhancement of the density-of-states effective mass and mobilities comparable to Mg2Si indicate band convergence in the solid solutions to be the cause of the power factor enhancement. Microstructural analysis shows the presence of secondary Si rich phases while the matrix corresponds to Mg2(Si0.3Sn0.7). A doped compound with this composition is synthesized and exhibits superior ZT values (compared to the Mg2(Si0.4Sn0.6) specimens) with a ZTmax approximate to 1.3 at 773K.

Harvard-Zitierstil: Dasgupta, T., Stiewe, C., de Boor, J. and Mueller, E. (2014) Influence of power factor enhancement on the thermoelectric figure of merit in Mg₂Si_0.4Sn_0.6 based materials, physica status solidi (a) – applications and materials science, 211(6), pp. 1250-1254. https://doi.org/10.1002/pssa.201300196

APA-Zitierstil: Dasgupta, T., Stiewe, C., de Boor, J., & Mueller, E. (2014). Influence of power factor enhancement on the thermoelectric figure of merit in Mg₂Si_0.4Sn_0.6 based materials. physica status solidi (a) – applications and materials science. 211(6), 1250-1254. https://doi.org/10.1002/pssa.201300196