Journalartikel

Local N environment in the dilute nitrides Ga(N,P), Ga(N,As), and Ga(N,Sb)


AutorenlisteGuengerich, M.; Sander, T.; Heiliger, C.; Czerner, M.; Klar, P. J.

Jahr der Veröffentlichung2013

Seiten755-759

Zeitschriftphysica status solidi (b) – basic solid state physics

Bandnummer250

Heftnummer4

ISSN0370-1972

eISSN1521-3951

DOI Linkhttps://doi.org/10.1002/pssb.201200458

VerlagWiley


Abstract
We study the hydrostatic pressure response of the local environment of N in the ternary dilute nitride alloys, i.e., GaN0.021P0.979, GaN0.085As0.915, and GaN0.015Sb0.985 by Raman spectroscopy and density functional theory (DFT) of the local vibrational mode (LVM) of N. In all samples studied N is surrounded by four Ga atoms. To a first approximation the N vibrational mode can be described by the N-atom vibrating in a rigid cage formed by the four Ga nearest neighbors. However, our careful experimental and theoretical analysis reveals that, despite the same nearest neighbor environment of N in the three dilute nitride hosts under study, distinct differences between the pressure dependence of the corresponding local N-vibrational modes remain. These differences are rather due to the different chemical identities of the anions of the host than due to differences in N content and strain. Furthermore, it is shown that the LVM of N in the three alloys behaves differently under hydrostatic pressure than the optical extended phonon modes of zincblende GaN. (C)13 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim



Zitierstile

Harvard-ZitierstilGuengerich, M., Sander, T., Heiliger, C., Czerner, M. and Klar, P. (2013) Local N environment in the dilute nitrides Ga(N,P), Ga(N,As), and Ga(N,Sb), physica status solidi (b) – basic solid state physics, 250(4), pp. 755-759. https://doi.org/10.1002/pssb.201200458

APA-ZitierstilGuengerich, M., Sander, T., Heiliger, C., Czerner, M., & Klar, P. (2013). Local N environment in the dilute nitrides Ga(N,P), Ga(N,As), and Ga(N,Sb). physica status solidi (b) – basic solid state physics. 250(4), 755-759. https://doi.org/10.1002/pssb.201200458



Schlagwörter


III-V semiconductorslocalized modes


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