Journal article

Publication year: 2011

Journal: Physical Review B

Volume number: 83

Issue number: 23

ISSN: 1098-0121

DOI Link: https://doi.org/10.1103/PhysRevB.83.235213

Publisher: American Physical Society

Abstract: 
Photomodulated reflectance (PR) spectra of (B, Ga, In) As epilayers reveal unusual changes of the fundamental band gap PR line shape with temperature and hydrostatic pressure. We show that these changes arise because temperature variation or hydrostatic pressure shifts the conduction band edge (CBE) into resonance with boron-related cluster states. The resulting line shape changes are described by a level repulsion model which yields states of mixed character with an exchange of oscillator strengths. This model is corroborated by theoretical calculations which show a finite density of boron cluster states above the CBE at room temperature, with appropriate symmetry to couple to the CBE state.

Harvard Citation style: Sander, T., Teubert, J., Klar, P., Lindsay, A. and O'Reilly, E. (2011) Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As, Physical review B, 83(23), Article 235213. https://doi.org/10.1103/PhysRevB.83.235213

APA Citation style: Sander, T., Teubert, J., Klar, P., Lindsay, A., & O'Reilly, E. (2011). Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As. Physical review B. 83(23), Article 235213. https://doi.org/10.1103/PhysRevB.83.235213