Journalartikel

Jahr der Veröffentlichung: 2008

Zeitschrift: Applied Physics Letters

Bandnummer: 93

Heftnummer: 23

ISSN: 0003-6951

DOI Link: https://doi.org/10.1063/1.3040312

Verlag: American Institute of Physics

Abstract: 
We study the transport properties of artificially structured n-type ZnO:Al thin films prepared by rf magnetron sputtering on glass substrates. The samples were patterned with an array of 4x4 and 8x8 mu m(2) holes. With decreasing hole size, the resistance of the samples increases. Filling the holes with Au or Al increases and decreases the resistance, respectively. All samples show a negative magnetoresistance, which becomes more pronounced with decreasing hole diameter. The filling of the holes with Au or Al reduces the effects of the artificial structuring on the magnetoresistance.

Harvard-Zitierstil: Elm, M., Henning, T., Klar, P. and Szyszka, B. (2008) Effects of artificially structured micrometer holes on the transport behavior of Al-doped ZnO layers, Applied Physics Letters, 93(23), Article 232101. https://doi.org/10.1063/1.3040312

APA-Zitierstil: Elm, M., Henning, T., Klar, P., & Szyszka, B. (2008). Effects of artificially structured micrometer holes on the transport behavior of Al-doped ZnO layers. Applied Physics Letters. 93(23), Article 232101. https://doi.org/10.1063/1.3040312