Journal article

Publication year: 2008

Journal: Applied Physics Letters

Volume number: 93

Issue number: 4

ISSN: 0003-6951

Open access status: Bronze

DOI Link: https://doi.org/10.1063/1.2959079

Publisher: American Institute of Physics

Abstract: 
We measured the Seebeck coefficients of n-type (Ga,In)(N,As), (B,Ga,In)As, and GaAs epitaxial layers with doping concentrations ranging from 10(17) to 10(19) cm(-3) in the temperature range between 50 and 290 K. Despite the significant differences in electronic structure between the nonamalgamation type quaternary alloys and the binary GaAs, the temperature dependence of the Seebeck coefficient for samples of similar doping concentration is almost the same for all three semiconductor systems. The finding can be explained by the similarity of the dispersions of the extended phonon states of the three semiconductor systems in conjunction with a dominant phonon drag contribution to the Seebeck coefficient in the temperature range studied. (C) 2008 American Institute of Physics.

Harvard Citation style: Homm, G., Klar, P., Teubert, J. and Heimbrodt, W. (2008) Seebeck coefficients of n-type (Ga,In)(N,As), (B,Ga,In)As, and GaAs, Applied Physics Letters, 93(4), Article 042107. https://doi.org/10.1063/1.2959079

APA Citation style: Homm, G., Klar, P., Teubert, J., & Heimbrodt, W. (2008). Seebeck coefficients of n-type (Ga,In)(N,As), (B,Ga,In)As, and GaAs. Applied Physics Letters. 93(4), Article 042107. https://doi.org/10.1063/1.2959079