Konferenzpaper
Autorenliste: Polimeni, A.; Pettinari, G.; Trotta, R.; Masia, F.; Felici, M.; Capizzi, M.; Lindsay, A.; O'Reilly, E. P.; Niebling, T.; Stolz, W.; Klar, P. J.; Martelli, F.; Rubini, S.
Jahr der Veröffentlichung: 2008
Seiten: 107-113
Zeitschrift: physica status solidi (a) – applications and materials science
Bandnummer: 205
Heftnummer: 1
ISSN: 1862-6300
eISSN: 1862-6319
DOI Link: https://doi.org/10.1002/pssa.200777462
Konferenz: 2nd Workshop on Impurity Based Electroluminescent Devices and Materials (IBEDM 2006)
Verlag: Wiley
Abstract:
The puzzling electronic properties of GaAsN have been investigated through the compositional dependence of two highly sensitive band structure parameters: the electron effective mass, m,, and the electron gyromagnetic factor, g(e). In the N concentration range from 0% to 0.7%, both m(e) and g(e) show a highly nonlinear dependence on N composition that can be explained in terms of alternating on- and off-resonance conditions between the red-shifting conduction band edge and specific energy-pinned N cluster states. Furthermore, the electronic properties of the material are studied under hydrostatic pressure, P. This allows tuning in a same sample the interaction between extended and localized states and disclosing a hierarchy between different nitrogen complexes as regards the extent of the perturbation these complexes exert on the electronic properties of the GaAs host crystal. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Zitierstile
Harvard-Zitierstil: Polimeni, A., Pettinari, G., Trotta, R., Masia, F., Felici, M., Capizzi, M., et al. (2008) Photoluminescene under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN, physica status solidi (a) – applications and materials science, 205(1), pp. 107-113. https://doi.org/10.1002/pssa.200777462
APA-Zitierstil: Polimeni, A., Pettinari, G., Trotta, R., Masia, F., Felici, M., Capizzi, M., Lindsay, A., O'Reilly, E., Niebling, T., Stolz, W., Klar, P., Martelli, F., & Rubini, S. (2008). Photoluminescene under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN. physica status solidi (a) – applications and materials science. 205(1), 107-113. https://doi.org/10.1002/pssa.200777462
Schlagwörter
ACCEPTOR; ALLOYS; BAND; SINGLE QUANTUM-WELLS