Journalartikel

Jahr der Veröffentlichung: 2007

Zeitschrift: Physical review A

Bandnummer: 76

Heftnummer: 3

ISSN: 1050-2947

eISSN: 1094-1622

Open Access Status: Green

DOI Link: https://doi.org/10.1103/PhysRevA.76.032717

Verlag: American Physical Society

Abstract: 
The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p(6)nln'l' dielectronic recombination (DR) resonances associated with 3s -> nl core excitations, 2s2p(6)3snln'l' resonances associated with 2s -> nl (n = 3,4) core excitations, and 2p(5)3snln'l' resonances associated with 2p -> nl (n = 3, . . ., infinity) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s -> 3pn'l' and 3s -> 3dn'l' (both n' = 3, . . ., 6) and 2p(5)3s3ln'l' (n' = 3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.

Harvard-Zitierstil: Schmidt, E., Bernhardt, D., Müller, A., Schippers, S., Fritzsche, S., Hoffmann, J., et al. (2007) Electron-ion recombination of SiIV forming SiIII:: Storage-ring measurement and multiconfiguration dirac-fock calculations, Physical review A, 76(3), Article 032717. https://doi.org/10.1103/PhysRevA.76.032717

APA-Zitierstil: Schmidt, E., Bernhardt, D., Müller, A., Schippers, S., Fritzsche, S., Hoffmann, J., Jaroshevich, A., Krantz, C., Lestinsky, M., Orlov, D., Wolf, A., Lukic, D., & Savin, D. (2007). Electron-ion recombination of SiIV forming SiIII:: Storage-ring measurement and multiconfiguration dirac-fock calculations. Physical review A. 76(3), Article 032717. https://doi.org/10.1103/PhysRevA.76.032717