Journal article

Publication year: 2006

Pages: 363-368

Journal: Organic Electronics

Volume number: 7

Issue number: 5

ISSN: 1566-1199

DOI Link: https://doi.org/10.1016/j.orgel.2006.04.003

Publisher: Elsevier

Abstract: 
Interfaces of either microcrystalline Si (mu c-Si) on the organic sensitizer phthalocyaninatozinc (PcZn) or of PcZn on amorphous Si (a-Si) were prepared to study the compatibility of the film growth of Si by chemical vapor deposition with the thermal and chemical stability of PcZn. The compatibility could be reached and, composite structures were prepared of a-Si with PcZn by simultaneous deposition. An electronic interaction of Si and PcZn was indicated by an observed fluorescence quenching in PcZn by subsequently deposited mu c-Si. The photoconductivity of a-Si was increased by absorption of light either in subsequently or simultaneously deposited PcZn as seen in photoconductivity spectra. The sensitization of Si by PcZn was thereby proven. The conditions to utilize this effect for a further development of thin film photovoltaic devices are discussed. (C) 2006 Elsevier B.V. All rights reserved.

Harvard Citation style: Kelting, C., Weiler, U., Mayer, T., Jaegermann, W., Makarov, S., Wöhrle, D., et al. (2006) Sensitization of thin-film-silicon by a phthalocyanine as strong organic absorber, Organic Electronics, 7(5), pp. 363-368. https://doi.org/10.1016/j.orgel.2006.04.003

APA Citation style: Kelting, C., Weiler, U., Mayer, T., Jaegermann, W., Makarov, S., Wöhrle, D., Abdallah, O., Kunst, M., & Schlettwein, D. (2006). Sensitization of thin-film-silicon by a phthalocyanine as strong organic absorber. Organic Electronics. 7(5), 363-368. https://doi.org/10.1016/j.orgel.2006.04.003