Journalartikel

Jahr der Veröffentlichung: 2005

Seiten: 685-692

Zeitschrift: Semiconductor Science and Technology

Bandnummer: 20

Heftnummer: 8

ISSN: 0268-1242

eISSN: 1361-6641

DOI Link: https://doi.org/10.1088/0268-1242/20/8/006

Verlag: IOP Publishing

Abstract: 
Post-growth treatments, such as annealing, sulfurization, etching as well as ageing, were performed on CuInS2 films prepared by RF reactive sputtering. Their effects on the structural, optical and electrical properties of the films were studied by means of x-ray diffraction (XRD) and scanning electron microscopy (SEM), optical transmission, and Hall effect measurement, respectively. Heating under vacuum at 500 degrees C for a certain duration causes recrystallization of the as-sputtered films. The secondary Cu-In phases coexisting in the films sputtered with an insufficient H2S flow during sputtering can be eliminated by annealing in H2S atmosphere at 500 degrees C for suitable duration. Meanwhile, the film structural as well as optical properties are enhanced. The electrical properties of the as-grown films changed dramatically with ageing in air, and annealing in vacuum or air. KCN etching removed CuxS segregations on the film surfaces and returned the film electrical property to its initial state.

Harvard-Zitierstil: He, Y., Krämer, T., Österreicher, I., Polity, A., Meyer, B. and Hardt, M. (2005) Post-growth treatment effects on properties of CuInS₂ thin films deposited by RF reactive sputtering, Semiconductor Science and Technology, 20(8), pp. 685-692. https://doi.org/10.1088/0268-1242/20/8/006

APA-Zitierstil: He, Y., Krämer, T., Österreicher, I., Polity, A., Meyer, B., & Hardt, M. (2005). Post-growth treatment effects on properties of CuInS₂ thin films deposited by RF reactive sputtering. Semiconductor Science and Technology. 20(8), 685-692. https://doi.org/10.1088/0268-1242/20/8/006