Journalartikel

Jahr der Veröffentlichung: 2004

Seiten: 4929-4931

Zeitschrift: Applied Physics Letters

Bandnummer: 85

Heftnummer: 21

ISSN: 0003-6951

DOI Link: https://doi.org/10.1063/1.1825053

Verlag: American Institute of Physics

Abstract: 
A series of ZnO1-xSx films with 0less than or equal toxless than or equal to1.0 was deposited by radio-frequency reactive sputtering on different substrates. The structural characterization by x-ray diffraction measurements revealed that the films have wurtzite symmetry and correlated investigations of the layer composition by photoelectron spectroscopy showed that the lattice constant varies linearly with x. The composition dependence of the band gap energy in the ternary system was determined by optical transmission and the optical bowing parameter was found to be about 3 eV. (C) 2004 American Institute Of Physics.

Harvard-Zitierstil: Meyer, B., Polity, A., Farangis, B., He, Y., Hasselkamp, D., Krämer, T., et al. (2004) Structural properties and bandgap bowing of ZnO_1-xS_x thin films deposited by reactive sputtering, Applied Physics Letters, 85(21), pp. 4929-4931. https://doi.org/10.1063/1.1825053

APA-Zitierstil: Meyer, B., Polity, A., Farangis, B., He, Y., Hasselkamp, D., Krämer, T., & Wang, C. (2004). Structural properties and bandgap bowing of ZnO_1-xS_x thin films deposited by reactive sputtering. Applied Physics Letters. 85(21), 4929-4931. https://doi.org/10.1063/1.1825053