Journalartikel

Jahr der Veröffentlichung: 2004

Zeitschrift: Physical review A

Bandnummer: 70

Heftnummer: 4

ISSN: 1050-2947

eISSN: 1094-1622

DOI Link: https://doi.org/10.1103/PhysRevA.70.042717

Verlag: American Physical Society

Abstract: 
We present experimental measurements and theoretical calculations for the electron-impact single ionization ross section of Sc+ ions covering an energy rang from threshold to 1000 eV. An electron-ion crossed-beams setup was employed for the measurements of absolute cross sections as well as for a high-resolution energy scan to uncover fine details in the energy dependence of the cross section. Direct ionization is described by configuration-averaged distorted-wave theory and indirect ionization by R-matrix theory. Indirect processes contribute to the total ionization cross section by up to similar to40%. This finding is related to the existence of strong 3p-->3d excitation channels in Sc+(3p(6)3d4s). The shape of the related cross-section feature is reminiscent of the very strong 4d-->4f excitation, found in the ionization of xenon and its neighboring elements.

Harvard-Zitierstil: Jacobi, J., Knopp, H., Schippers, S., Müller, A., Loch, S., Witthoeft, M., et al. (2004) Strong contributions of indirect processes to the electron-impact ionization cross section of Sc+ ions, Physical review A, 70(4), Article 042717. https://doi.org/10.1103/PhysRevA.70.042717

APA-Zitierstil: Jacobi, J., Knopp, H., Schippers, S., Müller, A., Loch, S., Witthoeft, M., Pindzola, M., & Ballance, C. (2004). Strong contributions of indirect processes to the electron-impact ionization cross section of Sc+ ions. Physical review A. 70(4), Article 042717. https://doi.org/10.1103/PhysRevA.70.042717