Conference paper

Chemical beam epitaxial growth of AlInAs and investigations of electrolytes for ECV profiling


Authors listUdhayasankar, M; Kumar, J; Ramasamy, P

Publication year2004

Pages389-395

JournalJournal of Crystal Growth

Volume number268

Issue number3-4

ISSN0022-0248

DOI Linkhttps://doi.org/10.1016/j.jcrysgro.2004.04.060

ConferenceInternational Conference on Materials for Advanced Technologies

PublisherElsevier


Abstract
ALInAs has been grown by CBE technique for ultra-fast switching device applications. The materials were grown in the temperature range of 693-803 K and a low growth rate of 0.3 mum/h was employed in order to enhance the surface ad-atom residence time. The grown materials have excellent crystallographic and optical properties as studied by HRXRD and low temperature photoluminescence (LT PL) measurements. There is no suitable electrolyte available to successfully profile the dopants in AlInAs by ECV method. An effort has been made to develop an appropriate electrolyte for profiling AlInAs material. A number of electrolytic solutions were investigated and among the probed solutions, two different electrolytes namely HNO3:H2O2::HF:H2O and NH4F have been realised. Both have very low electrolytic resistance and a low free chemical etch rate values with good I-V and C-V characteristics. Using these electrolytes, the estimated carrier concentration value were in very good agreement with independently measured HALL effect measurement values. But the ECV measured thickness value does not agree well with that of stylus profiler measurement thickness value. This discrepancy has been explained on the basis of etching properties of aluminium containing compounds during electrochemical etching process. (C) 2004 Published by Elsevier B.V.



Citation Styles

Harvard Citation styleUdhayasankar, M., Kumar, J. and Ramasamy, P. (2004) Chemical beam epitaxial growth of AlInAs and investigations of electrolytes for ECV profiling, Journal of Crystal Growth, 268(3-4), pp. 389-395. https://doi.org/10.1016/j.jcrysgro.2004.04.060

APA Citation styleUdhayasankar, M., Kumar, J., & Ramasamy, P. (2004). Chemical beam epitaxial growth of AlInAs and investigations of electrolytes for ECV profiling. Journal of Crystal Growth. 268(3-4), 389-395. https://doi.org/10.1016/j.jcrysgro.2004.04.060



Keywords


ALInAsCAPACITANCE-VOLTAGE MEASUREMENTSCBECVE profilingHETEROJUNCTIONHETEROSTRUCTURESINPLayersultrafast switching devicesVAPOR-DEPOSITIONZNSE

Last updated on 2025-02-04 at 04:08