Conference paper

Publication year: 2003

Pages: 978-981

Journal: Physica B: Condensed Matter

Volume number: 340

ISSN: 0921-4526

DOI Link: https://doi.org/10.1016/j.physb.2003.09.170

Conference: 22nd International Conference on Defects in Semiconductors (ICDS-22)

Publisher: Elsevier

Abstract: 
In order to investigate the defects responsible for the sub-band-gap absorption in ZnGeP2 optically detected magnetic resonance (ODMR) using the magnetic circular dichroism of the absorption (MCDA) as detection channel was applied. This is the first ODMR study of defects in II-IV-V-2 chalcopyrites. The experiments exhibit that three different native defects contribute to the absorption in the spectral range from 0.5 eV to the band-gap energy of about 2.0 eV. The Ge antisite defects show a dominant transition near the band edge. Zn vacancies show strong MCD above 1.6 eV and below 1 eV, and the P vacancies are detected over the complete spectral range. In combination with photoinduced EPR studies these results reveal the contributions of the different defects to the broad absorption band. Peculiarities in the MCD of the Zn-vacancies are explained in terms of long spin-lattice relaxation times. (C) 2003 Elsevier B.V. All rights reserved.

Harvard Citation style: Hofmann, D., Romanov, N., Gehlhoff, W., Pfisterer, D., Meyer, B., Azamat, D., et al. (2003) Optically detected magnetic resonance experiments on native defects in ZnGeP₂, Physica B: Condensed Matter, 340, pp. 978-981. https://doi.org/10.1016/j.physb.2003.09.170

APA Citation style: Hofmann, D., Romanov, N., Gehlhoff, W., Pfisterer, D., Meyer, B., Azamat, D., & Hoffmann, A. (2003). Optically detected magnetic resonance experiments on native defects in ZnGeP₂. Physica B: Condensed Matter. 340, 978-981. https://doi.org/10.1016/j.physb.2003.09.170