Conference paper

Deposition of CuInS2 thin films by RF reactive sputtering with a ZnO:Al buffer layer


Authors listHe, YB; Kriegseis, W

Publication year2003

Pages2075-2079

JournalJournal of Physics and Chemistry of Solids

Volume number64

Issue number9-10

ISSN0022-3697

DOI Linkhttps://doi.org/10.1016/S0022-3697(03)00207-5

Conference13th International Conference on Ternary and Multinary Compounds

PublisherElsevier


Abstract
As a preliminary step towards superstrate-type solar cells, we fabricated films of a CuInS2/ZnO:Al/float glass configuration. A layer of aluminum doped ZnO (ZnO:Al) with a thickness of 320-450 nm was first prepared on float glass at 200 degreesC by mid-frequency magnetron reactive sputtering. Then, a CuInS2 layer, typically 500 nm thick, was deposited on this buffer at 200 degreesC by radio frequency reactive sputtering. X-ray diffraction revealed that the as-sputtered CuInS2 films are of chalcopyrite crystalline phase with a highly (112) preferential orientation. The surface morphology and microstructure of the films were characterized by atomic force microscopy and scanning electron microscopy, respectively. The as-sputtered layers are typically very homogeneous in depth as examined by secondary ion mass spectrometry. After anneal at 500 degreesC for 2 h, the sputtered CuInS2 films feature a sharp fundamental absorption edge at 1.49 eV, which is suitable for absorbing sunlight from the solar spectrum. (C) 2003 Elsevier Ltd. All rights reserved.



Citation Styles

Harvard Citation styleHe, Y. and Kriegseis, W. (2003) Deposition of CuInS2 thin films by RF reactive sputtering with a ZnO:Al buffer layer, Journal of Physics and Chemistry of Solids, 64(9-10), pp. 2075-2079. https://doi.org/10.1016/S0022-3697(03)00207-5

APA Citation styleHe, Y., & Kriegseis, W. (2003). Deposition of CuInS2 thin films by RF reactive sputtering with a ZnO:Al buffer layer. Journal of Physics and Chemistry of Solids. 64(9-10), 2075-2079. https://doi.org/10.1016/S0022-3697(03)00207-5



Keywords


SOLAR-CELLS

Last updated on 2025-02-04 at 04:15