Journalartikel

Jahr der Veröffentlichung: 2003

Seiten: 1743-1745

Zeitschrift: Applied Physics Letters

Bandnummer: 83

Heftnummer: 9

ISSN: 0003-6951

DOI Link: https://doi.org/10.1063/1.1606505

Verlag: American Institute of Physics

Abstract: 
Direct heteroepitaxial growth of uniform stoichiometric CuInS2 (CIS) thin films on sapphire (0001) substrates has been achieved by radio frequency reactive sputtering. X-ray omega-2theta scans reveal that the sputtered layers grow in a (112) orientation with a chalcopyrite structure. A rocking curve full width at half maximum of about 0.05degrees (180 arc sec) for the (112) peak demonstrates a nearly perfect out-of-plane arrangement of CIS (112)parallel tosapphire (0001). X-ray diffraction Phi scans further illustrate an excellent in-plane ordering of CIS [(1) over bar 10]parallel tosapphire (10 (1) over bar0). The sputtered thin CIS epilayers had a smooth surface with a typical root-mean-square roughness of about 3.3 nm as evaluated by atomic force microscopy. The epitaxial growth of tetragonal CIS on hexagonal sapphire provides evidence that heteroepitaxial growth may be realized between structures of different symmetry, such as films of cubic or tetragonal structures on hexagonal substrates or vice versa. (C) 2003 American Institute of Physics.

Harvard-Zitierstil: He, Y., Kriegseis, W., Meyer, B., Polity, A. and Serafin, M. (2003) Heteroepitaxial growth of CuInS₂ thin films on sapphire by radio frequency reactive sputtering, Applied Physics Letters, 83(9), pp. 1743-1745. https://doi.org/10.1063/1.1606505

APA-Zitierstil: He, Y., Kriegseis, W., Meyer, B., Polity, A., & Serafin, M. (2003). Heteroepitaxial growth of CuInS₂ thin films on sapphire by radio frequency reactive sputtering. Applied Physics Letters. 83(9), 1743-1745. https://doi.org/10.1063/1.1606505